This work presents the design and performance analysis of a Si/SiGe superlattice-based double gate feedback field-effect transistor (SL DGFBFET). The proposed SL DGFBFET is designed successively by stacking 3 nm thin Si and Si1−x Gex layers to achieve a higher ON current, extremely steeper switching characteristics, and a larger memory window than Si-based DGFBFET. The device offers 19 times higher ON current (2.24 × 10−3 A/μm), 10.36 times higher ION/IOFF ratio (∼ 7.44 × 109), a large memory window of 1.7 V, and an extremely lower subthreshold swing (∼ 0.3 μV/decade) than a Si-based FBFET of similar dimensions with a molar fraction x = 0.4, which can be very useful for memory and neuromorphic applications. The device’s OFF-to-ON switching is achieved at a lower gate voltage (threshold voltage = 0.34 V), making it suitable for low-power electronic devices. We have also shown the proposed device application in 1T DRAM which shows a remarkable performance in retention time (∼ 1000 s) and energy consumption (2.37 fJ/bit). The Synopsys TCAD tool has been utilized in the study to design the device structure and analyze its electrical performance.