This paper presents a broadband photodetector based on a MoS2Si heterostructure. The device’s optical per-formance was assessed by measuring responsivity, EQE, and photocurrent across a broad spectrum from 300 nm to 1100 nm. Illuminated with a constant low optical power of 1mW,the device’s photocurrent was recorded. The device exhibits a maximum responsivity of 38.5 mA/W at NIR wavelength (960 nm) and 13 mAIW for the visible spectrum (750 nm). Compared to other MoS2-based structures, the modeled device demonstrates improved performance. The modeling approach presented for this structure suggests a promising design strategy for MoS2- based optoelectronic devices at the nanoscale, with implications for the optoelectronics industry.