This paper analyzes the concept of hybridization to leverage the advantages of multiple technologies. Specifically, we have designed a hybrid multiplexer using memristors and Carbon Nano Tube Field Effect Transistors (CNTFETs). The nonvolatility, high density, and scalability of memristors render them very promising for memory-based analog and digital applications. due to its reduced propagation delay, low power consumption, and multi-threshold functioning, CNTFETs are preferred in digital circuit design. Through its integration, this work aims to maximize the benefits of both technologies. With the concept, we have designed hybrid 2:1, 4:1, and 8:1 multiplexers (MUX) capable of operating in the sub-threshold region not seen in conventional CMOS. The proposed 8:1 MUX offered delay, power dissipation, and power-delay product as 1 2. 0 0 5 × 10-8 s,3. 3 5 μ W, and 42.97 J respectively. To further reduce leakage current, we employed an advanced adaptation of the traditional power gating technique using CNTFET, with a power dissipation of 1.263 μ W. Comparative analysis with baseline CMOS technology indicates that the proposed hybrid approach significantly enhances the device specifications. All circuits were designed using 45 nm technology in Cadence Virtuoso.