Significant advantages in device and circuit performance have led to extensive research in the field of organic electronics. Specifically, we employed ATLAS™ (Silvaco TCAD) for device simulations. To investigate the effects of variations in channel length, thickness of organic semiconductor (OSC), and different dielectric material variations in the double-gate Organic Thin Film Transistor (DG-OTFT), the channel length (L) was varied from 10 μm to 30 μm. This modification resulted in a reduction of the drive current from -5.795 × 105 A to -1.346 × 10 A. The device’s performance was impacted, as the current ratio increased from 4.368 × 1013 to 5.325 × 1013. The thickness of the OSC varied from 10 μm to 50 μm. Furthermore, we evaluated the electrical characteristics of a pentacene-based DG-OTFT device, including transconductance (gm), on/off current ratio, and subthreshold slope (SS), threshold voltage (Vth).