This study explores the performance of an organic thin-film transistor (OTFT) as a temperature sensor over a range of 273K to 333K, utilizing a DNTT-based OTFT with a hybrid dielectric layer of HfO2/PMMA modelled using Silvaco ATLAS. At room temperature, the OTFT exhibits high electrical performance, characterized by a threshold voltage of 1.37V, an ION/IOFF ratio of 1.82 × 1011, and a mobility of 1.56 cm2/V•s. These properties make OTFTs highly suitable for precise and reliable temperature sensing applications. The study identifies significant variations in performance metrics within the temperature range, highlighting the impact of temperature on the drain current (ID), which shows a strong positive correlation with temperature. The enhanced dielectric interface from hybrid dielectrics and improved charge transport in the DNTT semiconductor support the sensor’s operation. Sensitivity analysis reveals that the device demonstrates high temperature sensitivity, particularly between 313K and 333K, with a measured sensitivity of 1.11 μA/°C compared to 273K-313K, underscoring the substantial changes in electrical properties per kelvin variation. This analysis underscores the potential of hybrid dielectric OTFTs in advanced temperature sensing applications.