This study presents a comprehensive analysis of Bottom-Gate Top-Contact Organic Field-Effect Transistors (OFETs) by evaluating the influence of various materials used for source/drain electrodes, gate electrodes, and organic semiconductor layers. The devices were fabricated using gold (Au), platinum (Pt), aluminum (Al), and copper (Cu) as source and drain electrodes, while the gate electrodes included Al, indium tin oxide (ITO), calcium (Ca), and highly doped silicon (Si). The semiconducting materials investigated in this work comprised pentacene, poly(3-hexylthiophene) (P3HT), polyimide, and dinaphthothienothiophene (DNTT). Our experimental results reveal that while the source/drain electrode materials have a minimal effect on the Vgs-Id characteristics, the choice of gate electrode significantly influences device performance. Among the tested gate materials, highly doped silicon demonstrated the most favorable characteristics, contributing to enhanced current modulation and improved field-effect behavior. The study also emphasizes the impact of different organic semiconductors on device performance. DNTT-based OFETs exhibited the highest charge carrier mobility, outperforming pentacene, P3HT, and polyimide. Furthermore, the effect of semiconductor layer thickness was analyzed by varying the pentacene layer from 20 nm to 60 nm in 10 nm increments. Although minor, these variations resulted in observable changes in the electrical characteristics, underscoring the importance of precise thickness control in OFET fabrication. Overall, the findings of this work highlight the critical role of material selection and structural optimization in the design of high-performance OFETs. The insights gained offer valuable guidance for future advancements in organic electronics and the development of next-generation flexible and low-cost electronic devices.