This work investigates how electrode material and contact thickness influence the contact resistance in short-channel Organic Thin-Film Transistors (OTFTs) with a top-contact bottom-gate (TCBG) architecture. Simulations are conducted using the 2D Atlas TCAD tool for OTFTs incorporating dinaphtho[2,3-b:2′,3′-f]thieno [3,2-b]thiophene (DNTT) as the organic semiconductor. Two electrode materials gold (Au) and aluminum (Al) are compared in terms of their effect on device parameters such as threshold voltage, drain current, carrier mobility, ION/IOFF ratio, and contact resistance. The results show that the high work function of gold substantially reduces contact resistance by approximately 13.6 × 103 times compared to aluminum. Furthermore, varying gold contact thickness from 10 nm to 50 nm significantly enhances charge injection and device uniformity, resulting in improved electrical characteristics. These findings highlight the importance of contact engineering for optimizing OTFT performance in next-generation organic electronics.