The researchers used computer software to design and improve a CIGS solar cell. They tested different thicknesses and material recipes for each layer to find the best combination. The performance of a CIGS thin-film solar cell was examined in this work using the two-dimensional device simulator SILVACO-ATLAS. Recognizing how the doping concentration and thickness of each layer affect the solar cell’s overall performance. AZO, intrinsic ZnO, CdS and a CIGS absorber layer were all present in the device structure. Different values were tested, and the best results were obtained with 0.06 μm i-ZnO, 0.04 μm CdS, 0.15 μm AZO, and 3 μm. Another crucial factor was the CIGS layer’s doping level. By enhancing carrier collection and lowering recombination losses The best results were obtained at a concentration of 10^18 cm-3. With these improved parameters, the solar cell generated a Jsc of 38.75 mA/cm2, a Voc of 0.804 V, and a fill factor of 74.48%, resulting in an overall efficiency of 23.20%.