HEMT as a microwave component has undergone a lot of experimentation for the last three decades since its invention at Bell labs by Takashi Mimura. InAlN has proved to be an extremely useful ternary semiconductor compound for its excellent scalability and high breakdown field[1] and turned out to be an ideal replacement for AlGaN as barrier for modern day HEMT’s. In this paper we report a 20nm InAlN/AlN/GaN HEMT for which InAlN acts as donor as well as barrier layer. The barrier layer was intentionally doped to improve the current capability and we registered an ION/IOFF ratio of 1010.1 for our device and on comparison with the conventional InAlN/GaN HEMT having an undoped barrier we have seen that the proposed device have a 105 times better ION/IOFF ratio. In this paper we discuss about the 2DEG transport properties and mobility performance for the device under consideration.