This paper proposes a dual-material dual gate (DMDG) FiNFET architecture that shows superior electrostatic control over the conventional FiNFET and planar MOS devices. The difference in the work function of the used gate metals and improved electrostatic integrity provided by the high-κ spacers mainly led to the performance improvements. Moreover, the proposed DMDG structure explores the possibility of a symmetric FiNFET architecture which will be highly beneficial from circuit application point of view.