Radio Frequency Magnetron Sputtering Technique has been employed to prepare metal oxide thin film of ZnO and CdO. The films were deposited in such condition that some point defects like oxygen vacancies have been Intentionally incorporated. The defects appeared with significant modification in the properties of the thin films. The prepared films were characterized by studying with X-ray diffraction study, X-ray photoelectron spectroscopic measurement, optical transmittance measurement, and electrical study. The electrical properties are found to change profoundly with the defect concentration. Consequently the optical properties also have been changed. © 2010 IACS.