Ge1-xSnx alloyed films were grown on glass substrates by sequential physical vapor deposition of a biaxial CaF2 buffer layer and a Sn heteroepitaxial layer at room temperature, followed by a Ge layer grown at low temperatures (200-350 °C). The predeposited Sn on the CaF 2 layer enhances Ge diffusion and crystallization. Sn is substituted into the Ge lattice to form a biaxial Ge1-xSnx alloyed film. The epitaxial relationships were obtained from X-ray pole figures of the samples with Ge1-xSnx 〈101〉∥CaF2 〈101〉 and Ge1-xSnx 〈110〉∥CaF 2 〈110〉. Crystallization and biaxial texture formation start at about 200 °C with the best biaxial Ge1-xSnx film grown at about 300 °C, which is 100 °C lower than the growth temperature of biaxial pure Ge film without Sn on the CaF2/glass substrate. The microstructure, texture and Sn concentration of the Ge 1-xSnx films were characterized by X-ray diffraction, X-ray pole figure analysis, and transmission electron microscopy. The spatial chemical composition of Sn in Ge1-xSnx was measured by energy-dispersive X-ray spectroscopy and was found to be nearly uniform throughout the thickness of the alloyed film. Raman spectra show shifts of Ge-Ge, Ge-Sn, and Sn-Sn vibration modes due to the percentage change of substitutional Sn in Ge as a function of growth temperature. This growth method is an alternative cost-effective way to grow biaxial semiconductor films on amorphous substrates. This journal is © the Partner Organisations 2014.