This paper extends the previous study on the electronic band structure of bilayer graphene (BG) under the influence of intrinsic spin–orbit interaction (ISOI), intralayer Rashba spin–orbit interactions (RSOI), and bias voltage (BV), where eigen values were calculated using the tight-binding (TB) approximation (van Gelderen and Smith, 2010). To better observe the effect of ISOI on band gap, we have increased its intensity beyond typical experimental values. Our results, evaluated at 200 K, 300 K, and 400 K, show that the application of BV and spin–orbit interactions significantly enhances thermoelectric performance, with the maximum electronic figure of merit reaching 0.47 when all interactions are present.