CdO thin films doped with Al have been prepared by radio frequency magnetron sputtering technique. The films were deposited on glass substrates at a temperature of 473 K and at a pressure of 0.1 mbar in (Ar + O2) atmosphere. The deposited films were characterized by studying X-ray diffraction, AFM image, XPS spectra, electrical conductivity and thermoelectric properties. Films with different atomic % of Al have the same cubic structure, good uniformity and high transparency. The Al doped CdO films deposited with optimized sputtering parameters are found to have high electrical conductivity along with very good thermoelectric power. ©2007 IEEE.