Examining graphene field effect sensors for ferroelectric thin film studies

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Examining graphene field effect sensors for ferroelectric thin film studies

Year : 2013

Source Title : Nano Letters

Document Type :

Abstract

We examine a prototype graphene field effect sensor for the study of the dielectric constant, pyroelectric coefficient, and ferroelectric polarization of 100-300 nm epitaxial (Ba,Sr)TiO3 thin films. Ferroelectric switching induces hysteresis in the resistivity and carrier density of n-layer graphene (n = 1-5) below 100 K, which competes with an antihysteresis behavior activated by the combined effects of electric field and temperature. We also discuss how the polarization asymmetry and interface charge dynamics affect the electronic properties of graphene. © 2013 American Chemical Society.