Tunnel FET-based ultra-low power, high-sensitivity UHF RFID rectifier

Publications

Tunnel FET-based ultra-low power, high-sensitivity UHF RFID rectifier

Author : Dr Vaddi Ramesh

Year : 2013

Source Title : Proceedings of the International Symposium on Low Power Electronics and Design

Document Type :

Abstract

Hetero-junction Tunnel FET (HTFET) for ultra-low power RF circuit design has been explored at the device and circuit level. In this paper, benchmarking and design insights for optimizing the performance of the TFET based differential drive rectifier is presented. Our evaluation of the HTFET based rectifier demonstrates its promise compared to the state-of-art passive RFIDs. With the 10-stage optimized TFET rectifier at 915 MHz, PCE of 98% with 0.5 nW power consumption, sensitivity of -24dBm for 9 μW PDC and sensitivity of -33dBm for 0.4μW PDC were achieved. © 2013 IEEE.