Tunneling Field-Effect Transistors (TFET) have emerged as a leading future transistor option for energy efficient and next generation VLSI. In this paper, we propose novel logic design exploiting TFET device unique asymmetrical characteristics and performance benchmarked with conventional TFET transmission gate (TG) based designs for energy efficiency. Proposed logic gates are ~7-10x energy efficient than the conventional TFET TG logic designs along with small on-chip area. This work further explores the scope of TFETs for dual mode transceiver design with resistive sensing circuit for 3D IC and time-to-digital converter (TDC) used in sensor interface circuits for IoT. TFET’s steep subthreshold slope characteristics enable designing high throughput and energy efficient transceiver circuits for 3D IC and sensor interface TDC circuits with highly precision and linearity.