Deposition of ZnO thin film at different substrate temperature using RF sputtering for growth of ZnO nanorods using hydrothermal method for UV detection

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Deposition of ZnO thin film at different substrate temperature using RF sputtering for growth of ZnO nanorods using hydrothermal method for UV detection

Year : 2020

Publisher : Springer Verlagservice@springer.de

Source Title : Lecture Notes in Electrical Engineering

Document Type :

Abstract

The growth properties of ZnO Nanorods was studied on different seed layers by the deposition of Zinc oxide (ZnO) thin film on SiO2/Si substrate by RF sputtering at two different conditions, i.e., one at room temperature and another at 400 °C substrate temperature. Surface morphology of the seed layer was studied by X-Ray Diffraction and Atomic Force Microscopy (AFM). Low cost hydrothermal method was employed for the growth of ZnO Nanorods on both the seed layers. The structural properties of ZnO nanorods were characterized by Field Emission Scanning Electron Microscope (FESEM). The FESEM images showed the proper alignment and orientation of ZnO nanorods grown on both the seed layers. The I-V measurements were carried out at room temperature under dark light and Ultraviolet (UV) light source. In order to examine the UV detection, MSM (Metal–Semiconductor–Metal) photodetector was fabricated and responsivity was measured for the nanorods grown on both seed layers. The better responsivity and contrast ratio of ZnO nanorods based UV detector was observed in case of 150 nm seed layer deposited at 400 °C.