Spin Transfer Torque Magnetic Random Access memory (STT-MRAM) is found to be one of the best candidates among all emerging non-volatile memories. High write energy is a bottleneck for CMOS based 1T and 2T STT-MRAM cells with scaling. To reduce the write energy of an STT-MRAM cell, a novel 2T Hybrid (Hetero-junction and Homo-junction) Tunnel Field Effect Transistor (TFET) based STT-MRAM cell has been proposed in this paper. The proposed 2T Hybrid TFET based STT-MRAM cell has less write energy and switching time due to TFET’s combined steep-slope and ambipolar characteristics in comparison to 1T/2T-FinFET, 1T/2T Hetero-junction TFET, 1T/2T homo-junction TFET based STT-MRAM cells.