Abstract
Schottky barrier diodes (SBDs) have been fabricated laterally on a β-Ga 2 O 3 film grown on both p-type and n-type Si (100) substrates using a pulsed laser deposition technique. The sample of Ga 2 O 3 on p-Si was further annealed at 600 C to optimize device performance. Platinum (Pt) and Titanium (Ti)/Gold (Au) metal stacks have been utilized for the formation of Schottky and Ohmic contact on the Ga 2 O 3, respectively. Considerably high breakdown voltages (V BR) of 190, and 172 V and a significantly low on-resistance (R on) of 330, and 15 mΩ. cm 2, have been obtained for the as-deposited sample and sample annealed at 600 C, respectively for lateral Ga 2 O 3/p-Si SBDs. Moreover, a much lower V BR of 56 V and higher on-resistance of 970 mΩ. cm 2 have been measured for Ga 2 O 3/n-Si SBDs as compared to the Ga 2 O 3/p-Si. The presence of REduced SURface Field effect in n-Ga 2 O 3/p-Si based …
