Abstract
A unique metal–semiconductor–metal (MSM) photodetector has been fabricated using Sn incorporation in Ga 2 O 3 forming Sn x Ga 1-x O nanostructures (Ns) with platinum (Pt) metal as contacts. The mixed nanostructures (MNs) has been attributed to an increment in the detection range of UV (254–302 nm) with ultra-low dark current, hence a potential device in the field of long range deep-UV detector. Sn x Ga 1-x O Ns are deposited on c-plane sapphire using low-pressure chemical vapour deposition. From the x-ray diffraction (XRD) results, existence of both Sn x Ga 1-x O and tetragonal SnO 2 MNs are confirmed. The XRD peak shifts in Sn x Ga 1-x O are attributed to the integration of Sn with Ga forming a Sn x Ga 1-x O alloy with x to be∼ 7.3% determined from the Vegard’s law. The field effect scanning eletron microscope images show the thick diameter wire-shaped nanostructures. The absorption spectra show …
