Abstract
In this article, β-Ga2O3 film was deposited on the p-Si (100) substrate using pulsed laser deposition (PLD) technique for rapidly emerging Ga2O3-based Schottky barrier diodes (SBDs). Although X-ray diffraction (XRD) result reveals a polycrystalline trending film, a smooth and uniform as-grown surface has been characterized by atomic force microscope (AFM) and field-emission scanning electron microscope (FESEM). Further, we have investigated metal–semiconductor (M–S) contact behavior of the fully vertical SBDs with the four different metals such as aluminum (Al), silver (Ag), gold (Au), and platinum (Pt) on Ga2O3 after forming ohmic contacts on the backside of the Si substrate. The barrier heights of all four metals are typically in the range of 0.51–0.69 eV and 0.72–1.41 eV as obtained from the current–voltage (I–V) and capacitance–voltage (C–V) characteristics, respectively. The carrier concentration is …
