Abstract
In the present research work, Zinc oxide (ZnO) thin film was depos-ited on the Silicondioxide(SiO2)(~ 200 nm)/Silicon substrate by using Radio Frequency (RF) sputtering at 4000C to study the effect of deposition temperature on growth of ZnO Nanorods on ZnO thin films. The thin-film surface morphology was examined using X-ray diffraction and Atomic Force Microscopy. Hydrothermal method was used for the growth of ZnO nanorods on ZnO thin films. The ZnO nanorods’ structural properties were determined using Field Emission Scanning Electron Microscopy and X-ray diffraction.To investigate the effect of temperature variation onZnO Nanorod growth and orientation was studied. The Metal Semiconductor Metal(MSM) based device structure was fabricated by depositing Ti/Au contact using thermal evaporator and shadow mask technique. Further, the electrical characteristics were carried out by using semi-conductor parameter analyzer. Later the device was exposed to UV light of frequency 365 nm and 380 nm to study the photodetection capability.And finally the sensing propertiesof the device was measured by exposing it to ethanol. The obtained results support positively for their wide applications in the area of optoelectronic and sensing based electronic devices.
