This article put forward a novel device structure of electrically doped tunnel field effect transistor to improve DC and RF performance with suppressed ambipolarity and gate leakage. For suppressing gate leakage and ambipolarity, gate underlapping has been presented, which does not significantly affect the Analog/RF parameters of the device. Further, for improving the device performance a novel initiative of implanting a T-shaped metal layer under gate electrode at source/channel interface with high-k dielectric material has been investigated in the proposed structure. In addition, optimization of gate and electrical drain underlapping is investigated in comparative manner for proposed structure.