Abstract
Cost-effective integration with existing silicon CMOS electronics has been one of the primary motivations for most of the emerging non-silicon devices. In this context, β-gallium oxide (Ga2O3) films were deposited on Si (100) substrate using pulsed laser deposition (PLD) technique in this research. After deposition, samples were further annealed at 600 °C and 800 °C under vacuum. X-ray diffractometer (XRD) was employed to observe the crystallinity variation due to the annealing. The crystallinity of samples degrades with annealing at 600 °C and an incremental improvement in crystallinity was again exhibited at 800 °C due to the possible rearrangement of the Ga and O atoms to their optimal sites. Further, x-ray photoelectron spectroscopy (XPS) was used for identification of elements and chemical composition. XPS results were also analyzed to locate the position of Ga 2p and Si 2p core levels and calculate the …
